III–V nanowire photovoltaics: Review of design for high efficiency
Identifieur interne : 000F95 ( Main/Exploration ); précédent : 000F94; suivant : 000F96III–V nanowire photovoltaics: Review of design for high efficiency
Auteurs : R. R. Lapierre [Canada] ; A. C. E. Chia [Canada] ; S. J. Gibson [Canada] ; C. M. Haapamaki [Canada] ; J. Boulanger [Canada] ; R. Yee [Canada] ; P. Kuyanov [Canada] ; J. Zhang [Canada] ; N. Tajik [Canada] ; N. Jewell [Canada] ; K. M. A. Rahman [Canada]Source :
- physica status solidi (RRL) – Rapid Research Letters [ 1862-6254 ] ; 2013-10.
English descriptors
- KwdEn :
Abstract
This article reviews recent developments in nanowire‐based photovoltaics (PV) with an emphasis on III–V semiconductors including growth mechanisms, device fabrication and performance results. We first review the available nanowire growth methods followed by control of nanowire growth direction and crystal structure. Important device issues are reviewed, including optical absorption, carrier collection, strain accommodation, design for high efficiency, tunnel junctions, Ohmic contact formation, passivation and doping. Performance data of III–V nanowire cells and the primary challenges in nanowire PV are summarized. Many of the issues discussed here are also applicable to other nanowire devices such as photodetectors. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Url:
DOI: 10.1002/pssr.201307109
Affiliations:
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Haapamaki</name><affiliation wicri:level="4"><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario, L8S 4L7</wicri:regionArea><orgName type="university">Université McMaster</orgName><placeName><settlement type="city">Hamilton (Ontario)</settlement><region type="state">Ontario</region></placeName></affiliation></author><author><name sortKey="Boulanger, J" sort="Boulanger, J" uniqKey="Boulanger J" first="J." last="Boulanger">J. Boulanger</name><affiliation wicri:level="4"><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario, L8S 4L7</wicri:regionArea><orgName type="university">Université McMaster</orgName><placeName><settlement type="city">Hamilton (Ontario)</settlement><region type="state">Ontario</region></placeName></affiliation></author><author><name sortKey="Yee, R" sort="Yee, R" uniqKey="Yee R" first="R." last="Yee">R. Yee</name><affiliation wicri:level="4"><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario, L8S 4L7</wicri:regionArea><orgName type="university">Université McMaster</orgName><placeName><settlement type="city">Hamilton (Ontario)</settlement><region type="state">Ontario</region></placeName></affiliation></author><author><name sortKey="Kuyanov, P" sort="Kuyanov, P" uniqKey="Kuyanov P" first="P." last="Kuyanov">P. 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Zhang</name><affiliation wicri:level="4"><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario, L8S 4L7</wicri:regionArea><orgName type="university">Université McMaster</orgName><placeName><settlement type="city">Hamilton (Ontario)</settlement><region type="state">Ontario</region></placeName></affiliation></author><author><name sortKey="Tajik, N" sort="Tajik, N" uniqKey="Tajik N" first="N." last="Tajik">N. Tajik</name><affiliation wicri:level="4"><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario, L8S 4L7</wicri:regionArea><orgName type="university">Université McMaster</orgName><placeName><settlement type="city">Hamilton (Ontario)</settlement><region type="state">Ontario</region></placeName></affiliation></author><author><name sortKey="Jewell, N" sort="Jewell, N" uniqKey="Jewell N" first="N." last="Jewell">N. 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Rahman</name><affiliation wicri:level="4"><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario, L8S 4L7</wicri:regionArea><orgName type="university">Université McMaster</orgName><placeName><settlement type="city">Hamilton (Ontario)</settlement><region type="state">Ontario</region></placeName></affiliation></author></analytic><monogr></monogr><series><title level="j">physica status solidi (RRL) – Rapid Research Letters</title><title level="j" type="abbrev">Phys. Status Solidi RRL</title><idno type="ISSN">1862-6254</idno><idno type="eISSN">1862-6270</idno><imprint><publisher>WILEY‐VCH Verlag</publisher><pubPlace>Berlin</pubPlace><date type="published" when="2013-10">2013-10</date><biblScope unit="volume">7</biblScope><biblScope unit="issue">10</biblScope><biblScope unit="page" from="815">815</biblScope><biblScope unit="page" to="830">830</biblScope></imprint><idno type="ISSN">1862-6254</idno></series><idno type="istex">F1A17CFD6606C4FC04E81A8CB25E4F7238E759E8</idno><idno type="DOI">10.1002/pssr.201307109</idno><idno type="ArticleID">PSSR201307109</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">1862-6254</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>III−V semiconductors</term><term>nanowires</term><term>photovoltaics</term><term>solar cells</term></keywords></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This article reviews recent developments in nanowire‐based photovoltaics (PV) with an emphasis on III–V semiconductors including growth mechanisms, device fabrication and performance results. We first review the available nanowire growth methods followed by control of nanowire growth direction and crystal structure. Important device issues are reviewed, including optical absorption, carrier collection, strain accommodation, design for high efficiency, tunnel junctions, Ohmic contact formation, passivation and doping. Performance data of III–V nanowire cells and the primary challenges in nanowire PV are summarized. Many of the issues discussed here are also applicable to other nanowire devices such as photodetectors. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</div></front></TEI><affiliations><list><country><li>Canada</li></country><region><li>Ontario</li></region><settlement><li>Hamilton (Ontario)</li></settlement><orgName><li>Université McMaster</li></orgName></list><tree><country name="Canada"><region name="Ontario"><name sortKey="Lapierre, R R" sort="Lapierre, R R" uniqKey="Lapierre R" first="R. R." last="Lapierre">R. R. Lapierre</name></region><name sortKey="Boulanger, J" sort="Boulanger, J" uniqKey="Boulanger J" first="J." last="Boulanger">J. Boulanger</name><name sortKey="Chia, A C E" sort="Chia, A C E" uniqKey="Chia A" first="A. C. E." last="Chia">A. C. E. Chia</name><name sortKey="Gibson, S J" sort="Gibson, S J" uniqKey="Gibson S" first="S. J." last="Gibson">S. J. Gibson</name><name sortKey="Haapamaki, C M" sort="Haapamaki, C M" uniqKey="Haapamaki C" first="C. M." last="Haapamaki">C. M. Haapamaki</name><name sortKey="Jewell, N" sort="Jewell, N" uniqKey="Jewell N" first="N." last="Jewell">N. Jewell</name><name sortKey="Kuyanov, P" sort="Kuyanov, P" uniqKey="Kuyanov P" first="P." last="Kuyanov">P. Kuyanov</name><name sortKey="Rahman, K M A" sort="Rahman, K M A" uniqKey="Rahman K" first="K. M. A." last="Rahman">K. M. A. Rahman</name><name sortKey="Tajik, N" sort="Tajik, N" uniqKey="Tajik N" first="N." last="Tajik">N. Tajik</name><name sortKey="Yee, R" sort="Yee, R" uniqKey="Yee R" first="R." last="Yee">R. Yee</name><name sortKey="Zhang, J" sort="Zhang, J" uniqKey="Zhang J" first="J." last="Zhang">J. Zhang</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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